IRF520N IRF520 N-Channel MOSFET TO-220

Type Designator: IRF520N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO220AB

datasheet : http://www.redrok.com/MOSFET_IRF520N_100V_9.7A_200mO_Vth4.0_TO-220.pdf