FQPF6N60C FQPF6N60 FQPF 6N60C 6N60 TO-220 N-Channel Mosfet 600V 6A

FQPF6N60C FQPF6N60 FQPF 6N60C 6N60 TO-220 N-Channel Mosfet 600V 6A

General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchildís proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

Features
ï 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V
ï Low gate charge ( typical 16 nC)
ï Low Crss ( typical 7 pF)
ï Fast switching
ï 100% avalanche tested
ï Improved dv/dt capability

datasheet click