K2611 2SK2611 TO-3P 900V 9A Transistor MOSFET N-Channel

K2611 2SK2611 TO-3P 900V 9A Transistor MOSFET N-Channel 

Type Designator: 2SK2611
Marking Code: K2611
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 58 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO3P

datasheet