FQP27P06 FQP 27P06 60V 27A TO-220 P-Channel MOSFET Transistor

FQP27P06 FQP 27P06 60V 27A TO-220 P-Channel MOSFET Transistor

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.

Features
• -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V
• Low gate charge ( typical 33 nC)
• Low Crss ( typical 120 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

datasheet