P113
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Stok Habis
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Type Designator: IRFP9240
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 90(max) nC
Rise Time (tr): 15(max) nS
Drain-Source Capacitance (Cd): 450(max) pF
Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
Package: TO3P