J13009 2E13009 13009 TO-3P NPN High Power Transistor

J13009 2E13009 13009 TO-3P NPN High Power Transistor

High Voltage Switch Mode Applications

• High Speed Switching

• Suitable for Switching Regulator and Motor Control

NPN Silicon Transistor

Symbol Parameter Value Units

VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 12 A
ICP Collector Current (Pulse) 24 A
IB Base Current 6 A
PC Collector Dissipation (TC = 25°C) 100 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range -65 ~ 150 °C

datasheet