2SB817 B817 B 817 2SB 817 TO-3P Silicon PNP Power Transistors

2SB817 B817 B 817 2SB 817 TO-3P Silicon PNP Power Transistors

DESCRIPTION
·With TO-3PN package
·Complement to type 2SD1047

APPLICATIONS
·140V/12A AF 60W output applications

Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -160 V
VCEO Collector-emitter voltage Open base -140 V
VEBO Emitter-base voltage Open collector -6 V
IC Collector current (DC) -12 A
ICM Collector current-peak -15 A
PC Collector power dissipation TC=25℃ 100 W
Tj Junction temperature 150 ℃
Tstg Storage temperature -40~150 ℃

datasheet