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Diskon
3-6VDC Air Pump
Rp. 50.000 Rp. 40.000
RJP30H1 TO-252 N-channel IGBT High Speed Power Switching
Features
Trench gate and thin wafer technology (G6H-II series)
High speed switching: tr = 80 ns typ., tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
Low leak current: ICES = 1 A max.
datasheet click
