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ESP-12E NodeMCU Lua...
Rp. 60.000 Rp. 50.000
RJP30H2A TO-263 NPN IGBT High Speed Power Switching
RJP30H2 RJP30H2A LCD berdedikasi NPN FET TO-263 PDP Trench IGBT AZ78
Description:
360V, 35A, 60W, PDP Trench IGBT.
Silicon N Channel IGBT High speed power switching.
Features
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES= 1 A max
