P223-L2A13
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Descripiton:
The IRFP250PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
Dynamic dV/dt rating
Repetitive avalanche rated
Easy to parallel
Simple drive requirement
Isolated central mounting hole
Feature:
Channel Type:N
Maximum Continuous Drain Current:30 A
Maximum Drain Source Voltage:200 V
Maximum Drain Source Resistance:85 m
Minimum Gate Threshold Voltage:2V