P223
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84 Barang item
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Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
31A, 60V, RDS(on) = 0.022 @VGS = 10 V
Low gate charge ( typical 31 nC)
Low Crss ( typical 65 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175C maximum junction temperature rating