P10NK60ZFP FQPF10N60C FQPF10N60 10N60 FET 600V 9.5A TO-220

P10NK60ZFP FQPF10N60C FQPF10N60 10N60 FET 600V 9.5A TO-220

Datasheet...

Description:
These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology

SPEK:
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600V
Current - Continuous Drain (Id) @ 25C:9.5A (Tc)
Vgs(th) (Max) @ Id:4V @ 250A
Gate Charge (Qg) (Max) @ Vgs:57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:2040pF @ 25V
Power Dissipation (Max):50W (Tc)
Rds On (Max) @ Id, Vgs:730 mOhm @ 4.75A, 10V
Operating Temperature:-55C ~ 150C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F