FDA59N30 FDA 59N30 59A 300V N-Channel MOSFET

FDA59N30 FDA 59N30 59A 300V N-Channel MOSFET

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.

Features
ï 59A, 300V, RDS(on) = 0.056Ω @VGS = 10 V
ï Low gate charge ( typical 77 nC)
ï Low Crss ( typical 80 pF)
ï Fast switching
ï 100% avalanche tested
ï Improved dv/dt capability

datasheet