HY4008W HY4008 MOSFET N-Channel 200A 80V TO-247

HY4008W HY4008 MOSFET N-Channel 200A 80V TO-247

Type Designator: HY4008W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 397 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 200 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 195 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 1029 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm

Package: TO247

datasheet