P131
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Tanggal ketersediaan:
Jumlah | Harga | Anda menghemat |
---|---|---|
50 | Rp. 3.500 | Sampai dengan Rp. 10.000 |
GENERAL DESCRIPTION The ME4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● 30V/6.9A,RDS(ON)=25mΩ@VGS=10V (N-Ch)
● 30V/5.8A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch)
● -30V/-6.1A,RDS(ON)=35mΩ@VGS=-10V (P-Ch)
● -30V/-5.1A, RDS(ON)=58mΩ@ VGS=-4.5V (P-Ch)
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
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