P212-L2A13
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Stok Habis
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Type Designator: IRF9Z34N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 56 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 17 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 23.3 nC
Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
Package: TO220AB